IC DRAM 512MBIT PARALLEL 84TWBGA Product overview: IS43DR16320B-3DBI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory IC Chips. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2020-IS43DR16320B-3D
IC DRAM 512MBIT PARALLEL 84TWBGA
SDRAM - DDR2 Memory IC 512Mbit Parallel 333 MHz 450 ps 84-TW-BGA (10.5x13.5)
IC DRAM 512MBIT PARALLEL 84TWBGA
| ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | Quarktwin Technology Ltd. | ODG (Origin Data Global) | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 2020-IS43DR16320B-3DBI | IS43DR16320B-3DBI | IS43DR16320B-3DBI | IS43DR16320B-3DBI |
| Product Name | Memory IC and Storage Component | Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | SDRAM - DDR2; DRAM Chip |
| Access Time | 0.4500 ns | 0.4500 ns | 0.4500 ns | 0.4500 ns |
| Cycle Time | 15 ns | |||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
