Integrated Silicon Solution, Inc. Memory IS42S32800B-6BI-TR

Description
IC DRAM 256MBIT PARALLEL 90TFBGA
Datasheet
Description
IC DRAM 256MBIT PARALLEL 90TFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 256MBIT PARALLEL 90TFBGA

IC DRAM 256MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Memory - IS42S32800B-6BI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 256Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

SDRAM Memory IC 256Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IS42S32800B-6BI-TR IS42S32800B-6BI-TR
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 5.5 ns 5.5 ns
Density 256000 kbits 256000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420772 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details
Memory - JM38510/23113BFA - Quarktwin Technology Ltd.
View Details
2 suppliers
Memory - MT5C1009 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 6116SA20TPGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 16 kbits
View Details