Integrated Silicon Solution, Inc. Memory IS42S32400F-7B

Description
SDRAM Memory IC 128Mb (4M x 32) Parallel 143MHz 90-TFBGA (8x13)
Request a Quote
Description
SDRAM Memory IC 128Mb (4M x 32) Parallel 143MHz 90-TFBGA (8x13)
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IS42S32400F-7B is a 128Mb synchronous DRAM memory chip from Quarktwin Technology Ltd., designed for high-speed data transfer with a clock frequency of 143 MHz. It operates on a single power supply of 3.3V ¬±0.3V and features a fully synchronous interface, where all signals are referenced to the positive edge of the clock. The memory is organized as 4 banks of 1M x 32 bits, allowing for efficient data access and management. This memory chip supports programmable burst lengths of 1, 2, 4, 8, or full page, and offers both sequential and interleave burst sequences. It includes auto-refresh and self-refresh capabilities, with a refresh cycle of 4096 every 64 ms for commercial and industrial grades. The IS42S32400F-7B is available in a 90-ball TF-BGA package and is suitable for commercial temperature ranges from 0¬8C to +70¬8C. Engineers looking for a reliable and efficient memory solution for applications requiring moderate speed and power efficiency may find this product suitable for their needs.

Datasheet Summary
Powered by GS/AI

The IS42S32400F-7B is a 128Mb synchronous DRAM memory chip from Quarktwin Technology Ltd., designed for high-speed data transfer with a clock frequency of 143 MHz. It operates on a single power supply of 3.3V ¬±0.3V and features a fully synchronous interface, where all signals are referenced to the positive edge of the clock. The memory is organized as 4 banks of 1M x 32 bits, allowing for efficient data access and management. This memory chip supports programmable burst lengths of 1, 2, 4, 8, or full page, and offers both sequential and interleave burst sequences. It includes auto-refresh and self-refresh capabilities, with a refresh cycle of 4096 every 64 ms for commercial and industrial grades. The IS42S32400F-7B is available in a 90-ball TF-BGA package and is suitable for commercial temperature ranges from 0¬8C to +70¬8C. Engineers looking for a reliable and efficient memory solution for applications requiring moderate speed and power efficiency may find this product suitable for their needs.

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42S32400F-7B-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 128Mb (4M x 32) Parallel 143MHz 90-TFBGA (8x13)

SDRAM Memory IC 128Mb (4M x 32) Parallel 143MHz 90-TFBGA (8x13)

Buy Now Datasheet
Memory - IS42S32400F-7B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 128Mbit Parallel 143 MHz 90-TFBGA (8x13)

SDRAM Memory IC 128Mbit Parallel 143 MHz 90-TFBGA (8x13)

Buy Now Datasheet
IC DRAM 128MBIT PARALLEL 90TFBGA

IC DRAM 128MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS42S32400F-7B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42S32400F-7B
Integrated Circuits (ICs) - Memory IS42S32400F-7B
IC DRAM 128MBIT PARALLEL 90TFBGA

IC DRAM 128MBIT PARALLEL 90TFBGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42S32400F-7B-ND IS42S32400F-7B IS42S32400F-7B IS42S32400F-7B
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 774-HYB39L128160AC-7.5 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
View Details
SDRAM - 1882660P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 512000 kbits
View Details
Memory - MYXxxSMS0xGPS08PB-4108/x - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 32000000 kbits
View Details