SYNCHRONOUS DRAM, 4MX32, 5.4NS, CMOS, PBGA-90. FREE 2 YEAR RADWELL WARRANTY
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 810100-IS42S32400F-6
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM
Memory Type: Volatile
Memory Size: 128Mb (4M x 32)
Access Time: 5.4ns
Supplier Device Package: 90-TFBGA (8x13)
Temperature Range - Operating: 0°C ~ 70°C
Memory Format: DRAM
Clock Frequency: 166MHz
Memory Interface: Parallel
Manufacturer Package: 90-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 240
MSL Level: 3 (168 Hours)
Supply Voltage (V): 3V ~ 3.6V
SDRAM Memory IC 128Mb (4M x 32) Parallel 166MHz 5.4ns 90-TFBGA (8x13)
IC DRAM 128MBIT PAR 90TFBGA
IC DRAM 128MBIT PARALLEL 90TFBGA
SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 90-TFBGA (8x13)
| Radwell International | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 66794839 | 810100-IS42S32400F-6BL | IS42S32400F-6BL-ND | IS42S32400F-6BL | IS42S32400F-6BL | IS42S32400F-6BL |
| Product Name | Memory IC | Memory - SDRAM - IS42S32400F-6BL | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | |||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | |||
| Supply Voltage | 3V ~ 3.6V | 3V ~ 3.6V | 0degC ~ 70degC (TA) | 3.6V; 3V ~ 3.6V |
