Integrated Silicon Solution, Inc. Memory IS42S32400E-7BL

Description
SDRAM Memory IC 128Mb (4M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)
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Description
SDRAM Memory IC 128Mb (4M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)
Request a Quote
Datasheet
Datasheet Summary
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The IS42S32400E-7BL is a 128Mb synchronous DRAM memory chip from Quarktwin Technology Ltd., designed for high-speed data transfer with a clock frequency of 143 MHz. It operates on a single power supply of 3.3V ¬± 0.3V and features a fully synchronous interface, with all signals referenced to the positive edge of the clock. The memory is organized as 4 banks of 1M x 32 bits, allowing for efficient access and data handling. This memory chip supports programmable burst lengths of 1, 2, 4, 8, or full page, and offers both sequential and interleave burst sequences. It includes auto-refresh and self-refresh modes, with a refresh cycle of 4096 every 64 ms for commercial and industrial grades. The device is compatible with LVTTL signaling and provides programmable CAS latency options of 2 or 3 clocks. The IS42S32400E-7BL is available in a 90-ball TF-BGA package and is suitable for commercial temperature ranges from 0¬8C to +70¬8C. It is designed for applications requiring reliable and fast memory access, making it a suitable choice for various electronic projects.

Datasheet Summary
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The IS42S32400E-7BL is a 128Mb synchronous DRAM memory chip from Quarktwin Technology Ltd., designed for high-speed data transfer with a clock frequency of 143 MHz. It operates on a single power supply of 3.3V ¬± 0.3V and features a fully synchronous interface, with all signals referenced to the positive edge of the clock. The memory is organized as 4 banks of 1M x 32 bits, allowing for efficient access and data handling. This memory chip supports programmable burst lengths of 1, 2, 4, 8, or full page, and offers both sequential and interleave burst sequences. It includes auto-refresh and self-refresh modes, with a refresh cycle of 4096 every 64 ms for commercial and industrial grades. The device is compatible with LVTTL signaling and provides programmable CAS latency options of 2 or 3 clocks. The IS42S32400E-7BL is available in a 90-ball TF-BGA package and is suitable for commercial temperature ranges from 0¬8C to +70¬8C. It is designed for applications requiring reliable and fast memory access, making it a suitable choice for various electronic projects.

Suppliers

Company
Product
Description
Supplier Links
Memory - 706-1065-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 128Mb (4M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)

SDRAM Memory IC 128Mb (4M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)

Buy Now Datasheet
Memory - SDRAM - IS42S32400E-7BL - 1189020-IS42S32400E-7BL - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - IS42S32400E-7BL
1189020-IS42S32400E-7BL
Memory - SDRAM - IS42S32400E-7BL 1189020-IS42S32400E-7BL
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 1189020-IS42S32400E- 7BL Packaging: Tray Mounting Style: SMD Technology: SDRAM Memory Type: Volatile Memory Size: 128Mb (4M x 32) Access Time: 5.4ns Categories: Integrated Circuits Supplier Device Package: 90-TFBGA (8x13) Status: Obsolete Temperature Range - Operating: 0°C ~ 70°C Memory Format: DRAM Manufacturer Homepage: www.issi.com Clock Frequency: 143MHz Memory Interface: Parallel Manufacturer Package: 90-TFBGA Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 240 MSL Level: 2 (1 Year) Supply Voltage (V): 3V ~ 3.6V

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 1189020-IS42S32400E-7BL
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM
Memory Type: Volatile
Memory Size: 128Mb (4M x 32)
Access Time: 5.4ns
Categories: Integrated Circuits
Supplier Device Package: 90-TFBGA (8x13)
Status: Obsolete
Temperature Range - Operating: 0°C ~ 70°C
Memory Format: DRAM
Manufacturer Homepage: www.issi.com
Clock Frequency: 143MHz
Memory Interface: Parallel
Manufacturer Package: 90-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 240
MSL Level: 2 (1 Year)
Supply Voltage (V): 3V ~ 3.6V

Buy Now
IC DRAM 128MBIT PARALLEL 90TFBGA

IC DRAM 128MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS42S32400E-7BL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42S32400E-7BL
Integrated Circuits (ICs) - Memory IS42S32400E-7BL
IC DRAM 128MBIT PARALLEL 90TFBGA

IC DRAM 128MBIT PARALLEL 90TFBGA

Supplier's Site
Memory - IS42S32400E-7BL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 128Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)

SDRAM Memory IC 128Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 706-1065-ND 1189020-IS42S32400E-7BL IS42S32400E-7BL IS42S32400E-7BL IS42S32400E-7BL
Product Name Memory Memory - SDRAM - IS42S32400E-7BL Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type 90-TFBGA BGA BGA; 90-TFBGA
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