The 64Mbit SDRAM from Integrated Silicon Solution (ISSI) is designed for high-speed data transfer with a clock frequency of 143MHz. It features a synchronous interface and is organized as 512K bits x 32 bits across 4 banks, allowing for improved performance through internal bank access. The memory operates on a single 3.3V power supply and is compatible with LVTTL interfaces. This SDRAM supports programmable burst lengths of 1, 2, 4, 8, or full page, with options for sequential or interleave burst sequences. It includes self-refresh modes and can handle 4096 refresh cycles every 16ms for A2 grade or 64ms for commercial and industrial grades. The device is available in an 86-pin TSOP-II package and is suitable for commercial temperatures ranging from 0¬8C to +70¬8C, as well as industrial and automotive grades with extended temperature ranges. With an access time of 5.4ns and the ability to perform burst read/write operations, this SDRAM is suitable for applications requiring high-speed memory solutions.
IC DRAM 64MBIT PAR 86TSOP II Product overview: IS42S32200L-7TLI-TR from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S32200L-7TLI
Category: DRAM
Win Source Part Number: 1447505-IS42S32200L-
Manufacturer: ISSI, Integrated Silicon Solution Inc
SDRAM Memory IC 64Mb (2M x 32) Parallel 143MHz 5.4ns 86-TSOP II
SDRAM, 64MBIT, 143MHZ, TSOP-II-86; DRAM Memory Configuration:2M x 32bit; Memory Case Style:TSOP-II; No. of Pins:86Pins; IC Interface Type:Parallel; Access Time:5.4ns; Page Size:-; Operating Temperature Min:-40°C; Operating RoHS Compliant: Yes
IC DRAM 64MBIT PAR 86TSOP II
SDRAM Memory IC 64Mbit Parallel 143 MHz 5.4 ns 86-TSOP II
IC DRAM 64MBIT PAR 86TSOP II
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS42S32200L-7TLI-TR | 1447505-IS42S32200L-7TLI-TR | IS42S32200L-7TLI-TR-ND | 65AC6011 | IS42S32200L-7TLI-TR | IS42S32200L-7TLI-TR | IS42S32200L-7TLI-TR |
| Product Name | Memory IC and Storage Component | DRAM | Memory | Sdram, 64Mbit, 143Mhz, Tsop-Ii-86; Dram Memory Configuration Integrated Silicon Solution (Issi) | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | |
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | |||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | |||
| Density | 64000 kbits | 64000 kbits | 64000 kbits | 64000 kbits | 64000 kbits | ||
| Number of Words | 512 k |
