Integrated Silicon Solution, Inc. Memory IS42S32200L-6BI-TR

Description
SDRAM Memory IC 64Mb (2M x 32) Parallel 166MHz 5.4ns 90-TFBGA (8x13)
Request a Quote Datasheet
Description
SDRAM Memory IC 64Mb (2M x 32) Parallel 166MHz 5.4ns 90-TFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42S32200L-6BI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 64Mb (2M x 32) Parallel 166MHz 5.4ns 90-TFBGA (8x13)

SDRAM Memory IC 64Mb (2M x 32) Parallel 166MHz 5.4ns 90-TFBGA (8x13)

Buy Now Datasheet
Memory - IS42S32200L-6BI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 64Mbit Parallel 166 MHz 5.4 ns 90-TFBGA (8x13)

SDRAM Memory IC 64Mbit Parallel 166 MHz 5.4 ns 90-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42S32200L-6BI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42S32200L-6BI-TR
Integrated Circuits (ICs) - Memory IS42S32200L-6BI-TR
IC DRAM 64MBIT PARALLEL 90TFBGA

IC DRAM 64MBIT PARALLEL 90TFBGA

Supplier's Site
IC DRAM 64MBIT PARALLEL 90TFBGA

IC DRAM 64MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42S32200L-6BI-TR-ND IS42S32200L-6BI-TR IS42S32200L-6BI-TR IS42S32200L-6BI-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 64000 kbits 64000 kbits 64000 kbits 64000 kbits
Package Type 90-TFBGA BGA; 90-TFBGA BGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 2020-HYB25L512160AC-7.5 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Volatile; DRAM Chip
Access Time 6 ns
Cycle Time 14 ns
View Details
2 suppliers
Memory - AS8ER128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882878P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details
Memory - IS43DR32160C-3DBL - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category DRAM; DRAM Chip
Access Time 0.4500 ns
Density 512000 kbits
View Details