Integrated Silicon Solution, Inc. Memory IS42S32200E-6BI-TR

Description
SDRAM Memory IC 64Mb (2M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)
Request a Quote Datasheet
Description
SDRAM Memory IC 64Mb (2M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42S32200E-6BI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 64Mb (2M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)

SDRAM Memory IC 64Mb (2M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42S32200E-6BI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42S32200E-6BI-TR
Integrated Circuits (ICs) - Memory IS42S32200E-6BI-TR
IC DRAM 64MBIT PARALLEL 90TFBGA

IC DRAM 64MBIT PARALLEL 90TFBGA

Supplier's Site
IC DRAM 64MBIT PARALLEL 90TFBGA

IC DRAM 64MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Memory - IS42S32200E-6BI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 64Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

SDRAM Memory IC 64Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42S32200E-6BI-TR-ND IS42S32200E-6BI-TR IS42S32200E-6BI-TR IS42S32200E-6BI-TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 64000 kbits 64000 kbits 64000 kbits 64000 kbits
Package Type 90-TFBGA BGA BGA; 90-TFBGA
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