Integrated Silicon Solution, Inc. Memory IS42S32200E-5TL-TR

Description
SDRAM Memory IC 64Mb (2M x 32) Parallel 200MHz 5ns 86-TSOP II
Request a Quote
Description
SDRAM Memory IC 64Mb (2M x 32) Parallel 200MHz 5ns 86-TSOP II
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IS42S32200E-5TL-TR is a 64Mb synchronous dynamic RAM (SDRAM) memory chip organized as 512K bits x 32 bits x 4 banks, designed for high-speed data transfer with a clock frequency of up to 200 MHz. It operates on a single 3.3V power supply and features a fully synchronous interface, with all signals referenced to the positive edge of the clock. The memory supports programmable burst lengths of 1, 2, 4, 8, or full page, and allows for both sequential and interleave burst sequences. This memory chip includes self-refresh modes and can handle 4096 refresh cycles every 16ms for A2 grade or 64ms for commercial and industrial grades. It is compatible with LVTTL signaling and offers programmable CAS latency options of 2 or 3 clocks. The device is available in two package types: 86-pin TSOP-II and 90-ball TF-BGA, with operating temperature ranges suitable for commercial (0¬8C to +70¬8C), industrial (-40¬8C to +85¬8C), and automotive applications (-40¬8C to +105¬8C for A2 grade). Engineers considering this product should note its capabilities for high-speed, burst-oriented read and write operations, making it suitable for applications requiring efficient memory access.

Datasheet Summary
Powered by GS/AI

The IS42S32200E-5TL-TR is a 64Mb synchronous dynamic RAM (SDRAM) memory chip organized as 512K bits x 32 bits x 4 banks, designed for high-speed data transfer with a clock frequency of up to 200 MHz. It operates on a single 3.3V power supply and features a fully synchronous interface, with all signals referenced to the positive edge of the clock. The memory supports programmable burst lengths of 1, 2, 4, 8, or full page, and allows for both sequential and interleave burst sequences. This memory chip includes self-refresh modes and can handle 4096 refresh cycles every 16ms for A2 grade or 64ms for commercial and industrial grades. It is compatible with LVTTL signaling and offers programmable CAS latency options of 2 or 3 clocks. The device is available in two package types: 86-pin TSOP-II and 90-ball TF-BGA, with operating temperature ranges suitable for commercial (0¬8C to +70¬8C), industrial (-40¬8C to +85¬8C), and automotive applications (-40¬8C to +105¬8C for A2 grade). Engineers considering this product should note its capabilities for high-speed, burst-oriented read and write operations, making it suitable for applications requiring efficient memory access.

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42S32200E-5TL-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 64Mb (2M x 32) Parallel 200MHz 5ns 86-TSOP II

SDRAM Memory IC 64Mb (2M x 32) Parallel 200MHz 5ns 86-TSOP II

Buy Now Datasheet
Memory - IS42S32200E-5TL-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 64Mbit Parallel 200 MHz 5 ns 86-TSOP II

SDRAM Memory IC 64Mbit Parallel 200 MHz 5 ns 86-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42S32200E-5TL-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42S32200E-5TL-TR
Integrated Circuits (ICs) - Memory IS42S32200E-5TL-TR
IC DRAM 64MBIT PAR 86TSOP II

IC DRAM 64MBIT PAR 86TSOP II

Supplier's Site
IC DRAM 64MBIT PAR 86TSOP II

IC DRAM 64MBIT PAR 86TSOP II

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42S32200E-5TL-TR-ND IS42S32200E-5TL-TR IS42S32200E-5TL-TR IS42S32200E-5TL-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 64000 kbits 64000 kbits 64000 kbits 64000 kbits
Package Type "86-TFSOP (0.400"", 10.16mm Width)" 86-TFSOP (0.400\", 10.16mm Width)
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882648P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 1024000 kbits
Package Type SOIC; SOIC
View Details
 - NM27C040Q170 - Rochester Electronics
Specs
Memory Category PROM
Package Type DIP; CDIP32
View Details
3 suppliers
Memory - 585600-007-00 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - IS43DR32160C-3DBL - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category DRAM; DRAM Chip
Access Time 0.4500 ns
Density 512000 kbits
View Details