Integrated Silicon Solution, Inc. Memory IS42S32160F-7BLI-TR

Description
IC DRAM 512MBIT PARALLEL 90TFBGA
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Description
IC DRAM 512MBIT PARALLEL 90TFBGA
Request a Quote Datasheet

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Product
Description
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IC DRAM 512MBIT PARALLEL 90TFBGA

IC DRAM 512MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Memory - IS42S32160F-7BLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 512Mb (16M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)

SDRAM Memory IC 512Mb (16M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 90TFBGA

IC DRAM 512MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Memory - IS42S32160F-7BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 512Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)

SDRAM Memory IC 512Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42S32160F-7BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42S32160F-7BLI-TR
Integrated Circuits (ICs) - Memory IS42S32160F-7BLI-TR
IC DRAM 512MBIT PARALLEL 90TFBGA

IC DRAM 512MBIT PARALLEL 90TFBGA

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42S32160F-7BLI-TR IS42S32160F-7BLI-TR-ND IS42S32160F-7BLI-TR IS42S32160F-7BLI-TR IS42S32160F-7BLI-TR
Product Name Memory Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category SDRAM; DRAM Chip DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Data Rate 143 MHz 143 MHz
Access Time 5.4 ns 5.4 ns 5.4 ns 5.4 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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