Integrated Silicon Solution, Inc. Memory IC and Storage Component IS42S32160F-6BLI

Description
IC DRAM 512MBIT PAR 90TFBGA Product overview: IS42S32160F-6BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S32160F-6BLI can be used for catalog matching and distributor lookup.
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Description
IC DRAM 512MBIT PAR 90TFBGA Product overview: IS42S32160F-6BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S32160F-6BLI can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Memory IC and Storage Component - 774-IS42S32160F-6BLI - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-IS42S32160F-6BLI
Memory IC and Storage Component 774-IS42S32160F-6BLI
IC DRAM 512MBIT PAR 90TFBGA Product overview: IS42S32160F-6BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S32160F-6BLI can be used for catalog matching and distributor lookup.

IC DRAM 512MBIT PAR 90TFBGA Product overview: IS42S32160F-6BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S32160F-6BLI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - 706-1364-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 512Mb (16M x 32) Parallel 167MHz 5.4ns 90-TFBGA (8x13)

SDRAM Memory IC 512Mb (16M x 32) Parallel 167MHz 5.4ns 90-TFBGA (8x13)

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 90TFBGA

IC DRAM 512MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 993813-IS42S32160F-6BLI - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
993813-IS42S32160F-6BLI
Integrated Circuits (ICs) - Memory 993813-IS42S32160F-6BLI
Win Source Part Number: 993813-IS42S32160F-6 BLI Category: Integrated Circuits (ICs)>Memory Package: Tray Standard Package: 240 Mounting: SMD (SMT) Technology: SDRAM Memory Type: Volatile Memory Size: 512Mb (16M x 32) Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: DRAM Clock Frequency: 167 MHz Memory Interface: Parallel ECCN: EAR99 Fake Threat In the Open Market: 77 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0028 Mfr: ISSI, Integrated Silicon Solution Inc Other Names: 706-1364,IS42S32160F -6BLI-ND Base Product Number: IS42S32160

Win Source Part Number: 993813-IS42S32160F-6BLI
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 240
Mounting: SMD (SMT)
Technology: SDRAM
Memory Type: Volatile
Memory Size: 512Mb (16M x 32)
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: DRAM
Clock Frequency: 167 MHz
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 77 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0028
Mfr: ISSI, Integrated Silicon Solution Inc
Other Names: 706-1364,IS42S32160F-6BLI-ND
Base Product Number: IS42S32160

Buy Now Datasheet
Memory IC - 108077279 - Radwell International
Willingboro, NJ, United States
Memory IC
108077279
Memory IC 108077279
SYNCHRONOUS DRAM, 16MX32, 5.4NS, CMOS, IND TEMP, PBGA-90. FREE 2 YEAR RADWELL WARRANTY

SYNCHRONOUS DRAM, 16MX32, 5.4NS, CMOS, IND TEMP, PBGA-90. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - IS42S32160F-6BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS42S32160F-6BLI
Integrated Circuits (ICs) - Memory - Memory IS42S32160F-6BLI
IC DRAM 512MBIT PAR 90TFBGA

IC DRAM 512MBIT PAR 90TFBGA

Supplier's Site
Memory - IS42S32160F-6BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 512Mbit Parallel 167 MHz 5.4 ns 90-TFBGA (8x13)

SDRAM Memory IC 512Mbit Parallel 167 MHz 5.4 ns 90-TFBGA (8x13)

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 90TFBGA

IC DRAM 512MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey ODG (Origin Data Global) Win Source Electronics Radwell International Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-IS42S32160F-6BLI 706-1364-ND IS42S32160F-6BLI 993813-IS42S32160F-6BLI 108077279 IS42S32160F-6BLI IS42S32160F-6BLI IS42S32160F-6BLI
Product Name Memory IC and Storage Component Memory Memory Integrated Circuits (ICs) - Memory Memory IC Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category DRAM Chip DRAM Chip SDRAM; DRAM Chip Volatile; DRAM Chip DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 5.4 ns 5.4 ns 5.4 ns 5.4 ns 5.4 ns
Operating Temperature -40 C (-40 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Number of Words 4000 k
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