IC DRAM 512MBIT PARALLEL 90TFBGA
IC DRAM 512MBIT PAR 90TFBGA Product overview: IS42S32160D-7BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S32160D-7BLI
SDRAM Memory IC 512Mb (16M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 921631-IS42S32160D-7
Operating Temperature Range: -40°C ~ 85°C (TA)
Features: SDRAM Memory IC 512Mb (16M x 32) Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)
Package: Tray
Package: 90-TFBGA
Mounting: Surface Mount
Part Status: Not For New Designs
Family Name: IS42S32160
Categories: Integrated Circuits (ICs)
Case / Package: 90-TFBGA (8x13)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 84 pct.
Supply and Demand Status: Balance
Quantity per package: 240
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0028
IC DRAM 512MBIT PARALLEL 90TFBGA
SDRAM Memory IC 512Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)
IC DRAM 512MBIT PAR 90TFBGA
512M, 3.3V, SDRAM, 16Mx32, 143Mhz, 90 ball BGA (8Mm x 13mm) RoHS, IT
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42S32160D-7BLI | 774-IS42S32160D-7BLI | IS42S32160D-7BLI-ND | 921631-IS42S32160D-7BLI | IS42S32160D-7BLI | IS42S32160D-7BLI | IS42S32160D-7BLI | 77T0512 |
| Product Name | Memory | Memory IC and Storage Component | Memory | Memory - SDRAM - IS42S32160D-7BLI | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | 512M, 3.3V, Sdram, 16Mx32, 143Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs, It Integrated Silicon Solution (Issi) |
| Memory Category | SDRAM; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM Chip |
| Data Rate | 143 MHz | |||||||
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | ||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits |
