Integrated Silicon Solution, Inc. Memory IS42S32160D-7BLI

Description
SDRAM Memory IC 512Mb (16M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)
Request a Quote Datasheet
Description
SDRAM Memory IC 512Mb (16M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42S32160D-7BLI-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 512Mb (16M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)

SDRAM Memory IC 512Mb (16M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)

Buy Now Datasheet
Memory IC and Storage Component - 774-IS42S32160D-7BLI - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-IS42S32160D-7BLI
Memory IC and Storage Component 774-IS42S32160D-7BLI
IC DRAM 512MBIT PAR 90TFBGA Product overview: IS42S32160D-7BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S32160D-7BLI can be used for catalog matching and distributor lookup.

IC DRAM 512MBIT PAR 90TFBGA Product overview: IS42S32160D-7BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S32160D-7BLI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - SDRAM - IS42S32160D-7BLI - 921631-IS42S32160D-7BLI - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - IS42S32160D-7BLI
921631-IS42S32160D-7BLI
Memory - SDRAM - IS42S32160D-7BLI 921631-IS42S32160D-7BLI
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 921631-IS42S32160D-7 BLI Operating Temperature Range: -40°C ~ 85°C (TA) Features: SDRAM Memory IC 512Mb (16M x 32) Parallel 143 MHz 5.4 ns 90-TFBGA (8x13) Package: Tray Package: 90-TFBGA Mounting: Surface Mount Part Status: Not For New Designs Family Name: IS42S32160 Categories: Integrated Circuits (ICs) Case / Package: 90-TFBGA (8x13) ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 84 pct. Supply and Demand Status: Balance Quantity per package: 240 MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0028

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 921631-IS42S32160D-7BLI
Operating Temperature Range: -40°C ~ 85°C (TA)
Features: SDRAM Memory IC 512Mb (16M x 32) Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)
Package: Tray
Package: 90-TFBGA
Mounting: Surface Mount
Part Status: Not For New Designs
Family Name: IS42S32160
Categories: Integrated Circuits (ICs)
Case / Package: 90-TFBGA (8x13)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 84 pct.
Supply and Demand Status: Balance
Quantity per package: 240
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0028

Buy Now Datasheet
512M, 3.3V, Sdram, 16Mx32, 143Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs, It Integrated Silicon Solution (Issi) - 77T0512 - Newark, An Avnet Company
Chicago, IL, United States
512M, 3.3V, Sdram, 16Mx32, 143Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs, It Integrated Silicon Solution (Issi)
77T0512
512M, 3.3V, Sdram, 16Mx32, 143Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs, It Integrated Silicon Solution (Issi) 77T0512
512M, 3.3V, SDRAM, 16Mx32, 143Mhz, 90 ball BGA (8Mm x 13mm) RoHS, IT

512M, 3.3V, SDRAM, 16Mx32, 143Mhz, 90 ball BGA (8Mm x 13mm) RoHS, IT

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - IS42S32160D-7BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS42S32160D-7BLI
Integrated Circuits (ICs) - Memory - Memory IS42S32160D-7BLI
IC DRAM 512MBIT PAR 90TFBGA

IC DRAM 512MBIT PAR 90TFBGA

Supplier's Site
IC DRAM 512MBIT PARALLEL 90TFBGA

IC DRAM 512MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
IC DRAM 512MBIT PARALLEL 90TFBGA

IC DRAM 512MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Memory - IS42S32160D-7BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 512Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)

SDRAM Memory IC 512Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42S32160D-7BLI-ND 774-IS42S32160D-7BLI 921631-IS42S32160D-7BLI 77T0512 IS42S32160D-7BLI IS42S32160D-7BLI IS42S32160D-7BLI IS42S32160D-7BLI
Product Name Memory Memory IC and Storage Component Memory - SDRAM - IS42S32160D-7BLI 512M, 3.3V, Sdram, 16Mx32, 143Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs, It Integrated Silicon Solution (Issi) Integrated Circuits (ICs) - Memory - Memory Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM Chip Volatile; DRAM Chip SDRAM; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 90-TFBGA BGA; Tray BGA; 90-TFBGA (8x13) 90-TFBGA BGA; 90-TFBGA
Supply Voltage 3V ~ 3.6V 3.6V; 3V ~ 3.6V Surface Mount 3V ~ 3.6V 3.6V; 3V ~ 3.6V
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