SDRAM Memory IC 512Mb (16M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)
512M, 3.3V, SDRAM, 16Mx32, 143Mhz, 90 ball BGA (8Mm x 13mm) RoHS, T&R
IC DRAM 512MBIT PARALLEL 90TFBGA
IC DRAM 512MBIT PARALLEL 90TFBGA
SDRAM Memory IC 512Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)
| DigiKey | Newark, An Avnet Company | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42S32160D-7BL-TR-ND | 77T0511 | IS42S32160D-7BL-TR | IS42S32160D-7BL-TR | IS42S32160D-7BL-TR |
| Product Name | Memory | 512M, 3.3V, Sdram, 16Mx32, 143Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs, T&r Integrated Silicon Solution (Issi) | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | |
| Package Type | 90-TFBGA | BGA | BGA; 90-TFBGA |
