IC DRAM 512MBIT PARALLEL 90TFBGA
SDRAM Memory IC 512Mb (16M x 32) Parallel 166MHz 5.4ns 90-TFBGA (8x13)
512M, 3.3v, SDRAM, 16Mx32, 166Mhz, 90 ball BGA (8Mm x 13mm) RoHS, IT, T&R
SDRAM Memory IC 512Mbit Parallel 166 MHz 5.4 ns 90-TFBGA (8x13)
IC DRAM 512MBIT PARALLEL 90TFBGA
IC DRAM 512MBIT PARALLEL 90TFBGA
| ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42S32160D-6BLI-TR | IS42S32160D-6BLI-TR-ND | 77T0509 | IS42S32160D-6BLI-TR | IS42S32160D-6BLI-TR | IS42S32160D-6BLI-TR |
| Product Name | Memory | Memory | 512M, 3.3V, Sdram, 16Mx32, 166Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs, It, T&r Integrated Silicon Solution (Issi) | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | SDRAM; DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Data Rate | 166 MHz | 166 MHz | ||||
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
