Integrated Silicon Solution, Inc. Memory IS42S32160D-6BL-TR

Description
SDRAM Memory IC 512Mb (16M x 32) Parallel 166MHz 5.4ns 90-TFBGA (8x13)
Request a Quote Datasheet
Description
SDRAM Memory IC 512Mb (16M x 32) Parallel 166MHz 5.4ns 90-TFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42S32160D-6BL-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 512Mb (16M x 32) Parallel 166MHz 5.4ns 90-TFBGA (8x13)

SDRAM Memory IC 512Mb (16M x 32) Parallel 166MHz 5.4ns 90-TFBGA (8x13)

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 90TFBGA

IC DRAM 512MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS42S32160D-6BL-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42S32160D-6BL-TR
Integrated Circuits (ICs) - Memory IS42S32160D-6BL-TR
IC DRAM 512MBIT PARALLEL 90TFBGA

IC DRAM 512MBIT PARALLEL 90TFBGA

Supplier's Site
512M, 3.3V, Sdram, 16Mx32, 166Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs, T&r Integrated Silicon Solution (Issi) - 77T0507 - Newark, An Avnet Company
Chicago, IL, United States
512M, 3.3V, Sdram, 16Mx32, 166Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs, T&r Integrated Silicon Solution (Issi)
77T0507
512M, 3.3V, Sdram, 16Mx32, 166Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs, T&r Integrated Silicon Solution (Issi) 77T0507
512M, 3.3v, SDRAM, 16Mx32, 166Mhz, 90 ball BGA (8Mm x 13mm) RoHS, T&R

512M, 3.3v, SDRAM, 16Mx32, 166Mhz, 90 ball BGA (8Mm x 13mm) RoHS, T&R

Supplier's Site
Memory - IS42S32160D-6BL-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 512Mbit Parallel 166 MHz 5.4 ns 90-TFBGA (8x13)

SDRAM Memory IC 512Mbit Parallel 166 MHz 5.4 ns 90-TFBGA (8x13)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42S32160D-6BL-TR-ND IS42S32160D-6BL-TR IS42S32160D-6BL-TR 77T0507 IS42S32160D-6BL-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory 512M, 3.3V, Sdram, 16Mx32, 166Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs, T&r Integrated Silicon Solution (Issi) Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 90-TFBGA BGA BGA; 90-TFBGA
Unlock Full Specs
to access all available technical data

Similar Products

 - 93425DMQB40 - Rochester Electronics
Texas Instruments
Specs
Memory Category SRAM Chip
Logic Family TTL
Package Type DIP; CDIP16
View Details
3 suppliers
Memory - MYXxxSMS04GP32xxx-45/x - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882679 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - 28057297 A - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers