IC DRAM 128MBIT PAR 54TSOP II Product overview: IS42S16800F-7TLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S16800F-7TLI
IC DRAM 128MBIT PAR 54TSOP II
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 083497-IS42S16800F-7
Packaging: Tray
Mounting: SMD (SMT)
Technology: SDRAM
Memory Type: Volatile
Memory Size: 128Mb (8M x 16)
Access Time: 5.4ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 54-TSOP II
Supply Voltage - Operating: 3 V to 3.6 V
Memory Format: DRAM
Max Frequency: 143MHz
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
SDRAM Memory IC 128Mb (8M x 16) Parallel 143MHz 5.4ns 54-TSOP II
SDRAM, 128MBIT, 143MHZ, TSOP-II-54; DRAM Type:SDR; DRAM Density:128Mbit; DRAM Memory Configuration:8M x 16bit; Clock Frequency:143MHz; Memory Case Style:TSOP-II; No. of Pins:54Pins; Supply Voltage Nom:3.3V; Access Time:5.4ns; MSL:- RoHS Compliant: Yes
SDRAM, 128MBIT, 143MHZ, TSOP-II-54; DRAM Memory Configuration:8M x 16bit; Memory Case Style:TSOP-II; No. of Pins:54Pins; IC Interface Type:Parallel; Access Time:5.4ns; Page Size:-; Operating Temperature Min:-40°C; Operating RoHS Compliant: Yes
IC DRAM 128MBIT PAR 54TSOP II
SDRAM Memory IC 128Mbit Parallel 143 MHz 5.4 ns 54-TSOP II
IC DRAM 128MBIT PAR 54TSOP II
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS42S16800F-7TLI | IS42S16800F-7TLI | 083497-IS42S16800F-7TLI | 706-1270-ND | 65T1276 | 65AC6008 | IS42S16800F-7TLI | IS42S16800F-7TLI | IS42S16800F-7TLI |
| Product Name | Memory IC and Storage Component | Memory | Memory - SDRAM - IS42S16800F-7TLI | Memory | Sdram, 128Mbit, 143Mhz, Tsop-Ii-54; Dram Type Integrated Silicon Solution (Issi) | Sdram, 128Mbit, 143Mhz, Tsop-Ii-54; Dram Memory Configuration Integrated Silicon Solution (Issi) | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | DRAM Chip | SDRAM; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | ||
| Operating Temperature | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | |||
| Density | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | ||
| Number of Words | 2000 k |
