IC DRAM 128MBIT PAR 54TFBGA Product overview: IS42S16800F-6BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S16800F-6BLI
IC DRAM 128MBIT PARALLEL 54TFBGA
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 852121-IS42S16800F-6
Features: Memory IC 166 MHz 5.4 ns
Package: Tray
Family Name: IS42S16800
Categories: Integrated Circuits (ICs)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Quantity per package: 348
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 19 Weeks
REACH Status: REACH Unaffected
HTSUS: 8542.32.0002
SDRAM Memory IC 128Mb (8M x 16) Parallel 166MHz 5.4ns 54-TFBGA (8x8)
IC DRAM 128MBIT PAR 54TFBGA
SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 54-TFBGA (8x8)
IC DRAM 128MBIT PARALLEL 54TFBGA
SDRAM, 128MBIT, 166MHZ, BGA-54; DRAM Type:SDR; DRAM Density:128Mbit; DRAM Memory Configuration:8M x 16bit; Clock Frequency:166MHz; Memory Case Style:BGA; No. of Pins:54Pins; Supply Voltage Nom:3.3V; Access Time:5.4ns; MSL:- RoHS Compliant: Yes
TFBGA-54(8x8) SDRAM ROHS
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS42S16800F-6BLI | IS42S16800F-6BLI | 852121-IS42S16800F-6BLI | IS42S16800F-6BLI-ND | IS42S16800F-6BLI | IS42S16800F-6BLI | IS42S16800F-6BLI | 65T1264 | IS42S16800F-6BLI |
| Product Name | Memory IC and Storage Component | Memory | Memory - SDRAM - IS42S16800F-6BLI | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory | Sdram, 128Mbit, 166Mhz, Bga-54; Dram Type Integrated Silicon Solution (Issi) | Memory >> SDRAM |
| Memory Category | DRAM Chip | SDRAM; DRAM Chip | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | DRAM Chip |
| Access Time | 6.5 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | ||||
| Operating Temperature | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||||
| Density | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | ||
| Number of Words | 2000 k |
