Integrated Silicon Solution, Inc. Memory IS42S16800E-75EBL-TR

Description
SDRAM Memory IC 128Mb (8M x 16) Parallel 133MHz 5.4ns 54-TFBGA (8x8)
Request a Quote Datasheet
Description
SDRAM Memory IC 128Mb (8M x 16) Parallel 133MHz 5.4ns 54-TFBGA (8x8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42S16800E-75EBL-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 128Mb (8M x 16) Parallel 133MHz 5.4ns 54-TFBGA (8x8)

SDRAM Memory IC 128Mb (8M x 16) Parallel 133MHz 5.4ns 54-TFBGA (8x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42S16800E-75EBL-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42S16800E-75EBL-TR
Integrated Circuits (ICs) - Memory IS42S16800E-75EBL-TR
IC DRAM 128MBIT PARALLEL 54TFBGA

IC DRAM 128MBIT PARALLEL 54TFBGA

Supplier's Site
Memory - IS42S16800E-75EBL-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 128Mbit Parallel 133 MHz 5.4 ns 54-TFBGA (8x8)

SDRAM Memory IC 128Mbit Parallel 133 MHz 5.4 ns 54-TFBGA (8x8)

Buy Now Datasheet
IC DRAM 128MBIT PARALLEL 54TFBGA

IC DRAM 128MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42S16800E-75EBL-TR-ND IS42S16800E-75EBL-TR IS42S16800E-75EBL-TR IS42S16800E-75EBL-TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type 54-TFBGA BGA BGA; 54-TFBGA
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