Integrated Silicon Solution, Inc. Memory IS42S16800D-6T

Description
SDRAM Memory IC 128Mb (8M x 16) Parallel 166MHz 5.4ns 54-TSOP II
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Description
SDRAM Memory IC 128Mb (8M x 16) Parallel 166MHz 5.4ns 54-TSOP II
Request a Quote
Datasheet
Datasheet Summary
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The IS42S16800D-6T is a 128Mb synchronous DRAM memory chip from Quarktwin Technology Ltd., designed for high-speed data transfer with a clock frequency of 166 MHz. It features a fully synchronous interface, with all signals referenced to the positive edge of the clock. The memory is organized as 2M x 16 bits across four banks, allowing for efficient access and data handling. This memory operates at a power supply of 3.3V and is compatible with LVTTL interfaces. It supports programmable burst lengths of 1, 2, 4, 8, or full page, and offers both sequential and interleave burst sequences. The device includes an auto-refresh mode and a self-refresh capability, ensuring reliable performance during operation. Additionally, it has a low access time of 5.4 ns at a CAS latency of 3, making it suitable for applications requiring quick data retrieval. The IS42S16800D-6T is available in a 54-pin TSOP II package, making it suitable for various electronic designs. Its industrial temperature range and lead-free options enhance its versatility for different applications.

Datasheet Summary
Powered by GS/AI

The IS42S16800D-6T is a 128Mb synchronous DRAM memory chip from Quarktwin Technology Ltd., designed for high-speed data transfer with a clock frequency of 166 MHz. It features a fully synchronous interface, with all signals referenced to the positive edge of the clock. The memory is organized as 2M x 16 bits across four banks, allowing for efficient access and data handling. This memory operates at a power supply of 3.3V and is compatible with LVTTL interfaces. It supports programmable burst lengths of 1, 2, 4, 8, or full page, and offers both sequential and interleave burst sequences. The device includes an auto-refresh mode and a self-refresh capability, ensuring reliable performance during operation. Additionally, it has a low access time of 5.4 ns at a CAS latency of 3, making it suitable for applications requiring quick data retrieval. The IS42S16800D-6T is available in a 54-pin TSOP II package, making it suitable for various electronic designs. Its industrial temperature range and lead-free options enhance its versatility for different applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42S16800D-6T-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 128Mb (8M x 16) Parallel 166MHz 5.4ns 54-TSOP II

SDRAM Memory IC 128Mb (8M x 16) Parallel 166MHz 5.4ns 54-TSOP II

Buy Now Datasheet
Memory - IS42S16800D-6T - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 54-TSOP II

SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 54-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42S16800D-6T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42S16800D-6T
Integrated Circuits (ICs) - Memory IS42S16800D-6T
IC DRAM 128MBIT PAR 54TSOP II

IC DRAM 128MBIT PAR 54TSOP II

Supplier's Site
IC DRAM 128MBIT PAR 54TSOP II

IC DRAM 128MBIT PAR 54TSOP II

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42S16800D-6T-ND IS42S16800D-6T IS42S16800D-6T IS42S16800D-6T
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type TSOP; "54-TSOP (0.400"", 10.16mm Width)" 54-TSOP (0.400\", 10.16mm Width)
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