Integrated Silicon Solution, Inc. Memory IS42S16320D-6BLI

Description
SDRAM Memory IC 512Mb (32M x 16) Parallel 166MHz 5.4ns 54-TW-BGA (8x13)
Request a Quote Datasheet
Description
SDRAM Memory IC 512Mb (32M x 16) Parallel 166MHz 5.4ns 54-TW-BGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42S16320D-6BLI-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 512Mb (32M x 16) Parallel 166MHz 5.4ns 54-TW-BGA (8x13)

SDRAM Memory IC 512Mb (32M x 16) Parallel 166MHz 5.4ns 54-TW-BGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 1355122-IS42S16320D-6BLI - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory - Memory
1355122-IS42S16320D-6BLI
Integrated Circuits (ICs) - Memory - Memory 1355122-IS42S16320D-6BLI
Win Source Part Number: 1355122-IS42S16320D- 6BLI Category: Integrated Circuits (ICs) - Memory - Memory Temperature Range - Operating: -40°C ~ 85°C (TA) Fake Threat In the Open Market: 43 pct. MSL Level: 3 (168 Hours) Mfr: ISSI, Integrated Silicon Solution Inc Package: Tray Product Status: Not For New Designs Package / Case: 54-TFBGA Supplier Device Package: 54-TW-BGA (8x13) Base Product Number: IS42S16320 Technology: SDRAM Mounting Type: Surface Mount HTSUS: 8542.32.0028 REACH Status: REACH Unaffected ECCN: EAR99 Voltage - Supply: 3V ~ 3.6V Memory Type: Volatile Memory Format: DRAM Memory Size: 512Mbit Memory Organization: 32M x 16 Memory Interface: Parallel Clock Frequency: 166 MHz Access Time: 5.4 ns

Win Source Part Number: 1355122-IS42S16320D-6BLI
Category: Integrated Circuits (ICs) - Memory - Memory
Temperature Range - Operating: -40°C ~ 85°C (TA)
Fake Threat In the Open Market: 43 pct.
MSL Level: 3 (168 Hours)
Mfr: ISSI, Integrated Silicon Solution Inc
Package: Tray
Product Status: Not For New Designs
Package / Case: 54-TFBGA
Supplier Device Package: 54-TW-BGA (8x13)
Base Product Number: IS42S16320
Technology: SDRAM
Mounting Type: Surface Mount
HTSUS: 8542.32.0028
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - Supply: 3V ~ 3.6V
Memory Type: Volatile
Memory Format: DRAM
Memory Size: 512Mbit
Memory Organization: 32M x 16
Memory Interface: Parallel
Clock Frequency: 166 MHz
Access Time: 5.4 ns

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 54TFBGA

IC DRAM 512MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS42S16320D-6BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS42S16320D-6BLI
Integrated Circuits (ICs) - Memory - Memory IS42S16320D-6BLI
IC DRAM 512MBIT PAR 54TFBGA

IC DRAM 512MBIT PAR 54TFBGA

Supplier's Site
Memory - IS42S16320D-6BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 512Mbit Parallel 166 MHz 5.4 ns 54-TW-BGA (8x13)

SDRAM Memory IC 512Mbit Parallel 166 MHz 5.4 ns 54-TW-BGA (8x13)

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 54TFBGA

IC DRAM 512MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42S16320D-6BLI-ND 1355122-IS42S16320D-6BLI IS42S16320D-6BLI IS42S16320D-6BLI IS42S16320D-6BLI IS42S16320D-6BLI
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip SDRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 54-TFBGA 54-TFBGA BGA; 54-TFBGA
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