The IS42S16320B-6BLI is a 512Mb synchronous DRAM memory chip designed for high-speed data transfer with a clock frequency of 166 MHz. It operates on a 3.3V power supply and features a fully synchronous interface, with all signals referenced to the positive edge of the clock. The memory is organized as a quad-bank DRAM, allowing for efficient access and precharge hiding, which enhances performance during burst operations. This memory chip supports programmable burst lengths and sequences, enabling flexible data handling. It is compatible with LVTTL signaling and includes features such as auto-refresh and self-refresh modes. The device is available in a 54-ball W-BGA package, making it suitable for compact applications. The operating temperature range for this part is from -40¬8C to +85¬8C, making it suitable for industrial applications. Engineers considering this memory chip should note its high-speed capabilities and robust features, which may be beneficial for applications requiring efficient data processing and storage.
IC DRAM 512MBIT PARALLEL 54WBGA Product overview: IS42S16320B-6BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S16320B-6BLI
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 1188982-IS42S16320B-
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM
Memory Type: Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 5.4ns
Categories: Integrated Circuits
Supplier Device Package: 54-WBGA (11x13)
Status: Obsolete
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: DRAM
Manufacturer Homepage: www.issi.com
Clock Frequency: 166MHz
Memory Interface: Parallel
Manufacturer Package: 54-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 144
MSL Level: 3 (168 Hours)
Supply Voltage (V): 3V ~ 3.6V
SDRAM Memory IC 512Mb (32M x 16) Parallel 166MHz 5.4ns 54-WBGA (11x13)
IC DRAM 512MBIT PARALLEL 54WBGA
SDRAM Memory IC 512Mbit Parallel 166 MHz 5.4 ns 54-WBGA (11x13)
IC DRAM 512MBIT PARALLEL 54WBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS42S16320B-6BLI | 1188982-IS42S16320B-6BLI | IS42S16320B-6BLI-ND | IS42S16320B-6BLI | IS42S16320B-6BLI | IS42S16320B-6BLI |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - IS42S16320B-6BLI | Memory | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Package Type | BGA; Tray | 54-TFBGA | BGA | BGA; 54-TFBGA |
