SDRAM Memory IC 256Mb (16M x 16) Parallel 166MHz 5.4ns 54-TFBGA (8x8)
IC DRAM 256MBIT PARALLEL 54TFBGA
IC DRAM 256MBIT PARALLEL 54TFBGA
IC DRAM 256MBIT PARALLEL 54TFBGA
256M, 3.3V, SDRAM, 16Mx16, 166Mhz, 54 ball BGA (8Mm x 8mm) RoHS, IT, T&R
SDRAM Memory IC 256Mbit Parallel 166 MHz 5.4 ns 54-TFBGA (8x8)
| DigiKey | ODG (Origin Data Global) | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42S16160G-6BLI-TR-ND | IS42S16160G-6BLI-TR | IS42S16160G-6BLI-TR | IS42S16160G-6BLI-TR | 77T0491 | IS42S16160G-6BLI-TR |
| Product Name | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory | 256M, 3.3V, Sdram, 16Mx16, 166Mhz, 54 Ball Bga (8Mm X 8Mm) Rohs, It, T&r Integrated Silicon Solution (Issi) | Memory |
| Memory Category | DRAM Chip | SDRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | |
| Package Type | 54-TFBGA | 54-TFBGA | BGA | BGA; 54-TFBGA |
