Integrated Silicon Solution, Inc. Memory IS42S16160D-7B-TR

Description
SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 54-TW-BGA (8x13)
Datasheet
Description
SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 54-TW-BGA (8x13)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42S16160D-7B-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 54-TW-BGA (8x13)

SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 54-TW-BGA (8x13)

Buy Now Datasheet
IC DRAM 256MBIT PARALLEL 54TFBGA

IC DRAM 256MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS42S16160D-7B-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42S16160D-7B-TR
Integrated Circuits (ICs) - Memory IS42S16160D-7B-TR
IC DRAM 256MBIT PARALLEL 54TFBGA

IC DRAM 256MBIT PARALLEL 54TFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS42S16160D-7B-TR IS42S16160D-7B-TR IS42S16160D-7B-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 5.4 ns 5.4 ns 5.4 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 256000 kbits 256000 kbits 256000 kbits
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