Integrated Silicon Solution, Inc. Memory IS42S16160B-7T-TR

Description
SDRAM Memory IC 256Mb (16M x 16) Parallel 143MHz 5.4ns 54-TSOP II
Request a Quote
Description
SDRAM Memory IC 256Mb (16M x 16) Parallel 143MHz 5.4ns 54-TSOP II
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IS42S16160B-7T-TR is a 256Mb synchronous DRAM memory chip designed to operate at a clock frequency of up to 166 MHz. It features a fully synchronous interface with all signals referenced to the positive edge of the clock. The memory is organized into four banks, allowing for efficient access and data transfer through a pipeline architecture. This DRAM operates on a power supply of 3.3V for both VDD and VDDQ, and it supports LVTTL interface levels. It offers programmable burst lengths of 1, 2, 4, 8, or full page, along with programmable CAS latency options of 2 or 3 clocks. The device includes an auto-refresh mode and a self-refresh capability, ensuring data integrity during low-power states. The IS42S16160B-7T-TR is available in a 54-pin TSOP-II package and is suitable for industrial temperature applications. It is designed for high-speed data transfer with features that allow for random column address access every clock cycle, making it a versatile choice for various memory-intensive applications.

Datasheet Summary
Powered by GS/AI

The IS42S16160B-7T-TR is a 256Mb synchronous DRAM memory chip designed to operate at a clock frequency of up to 166 MHz. It features a fully synchronous interface with all signals referenced to the positive edge of the clock. The memory is organized into four banks, allowing for efficient access and data transfer through a pipeline architecture. This DRAM operates on a power supply of 3.3V for both VDD and VDDQ, and it supports LVTTL interface levels. It offers programmable burst lengths of 1, 2, 4, 8, or full page, along with programmable CAS latency options of 2 or 3 clocks. The device includes an auto-refresh mode and a self-refresh capability, ensuring data integrity during low-power states. The IS42S16160B-7T-TR is available in a 54-pin TSOP-II package and is suitable for industrial temperature applications. It is designed for high-speed data transfer with features that allow for random column address access every clock cycle, making it a versatile choice for various memory-intensive applications.

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42S16160B-7T-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 256Mb (16M x 16) Parallel 143MHz 5.4ns 54-TSOP II

SDRAM Memory IC 256Mb (16M x 16) Parallel 143MHz 5.4ns 54-TSOP II

Buy Now Datasheet
IC DRAM 256MBIT PAR 54TSOP II

IC DRAM 256MBIT PAR 54TSOP II

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS42S16160B-7T-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42S16160B-7T-TR
Integrated Circuits (ICs) - Memory IS42S16160B-7T-TR
IC DRAM 256MBIT PAR 54TSOP II

IC DRAM 256MBIT PAR 54TSOP II

Supplier's Site
Memory - IS42S16160B-7T-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 54-TSOP II

SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 54-TSOP II

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42S16160B-7T-TR-ND IS42S16160B-7T-TR IS42S16160B-7T-TR IS42S16160B-7T-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits
Package Type TSOP; "54-TSOP (0.400"", 10.16mm Width)" 54-TSOP (0.400\", 10.16mm Width)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS4SD4M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 32000 kbits
View Details
Memory - 315-0827-000 001 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
SDRAM - 1882660 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
SN54ABT7819 512 x 18 x 2 Synchronous Bidirectional FIFO Memory - 5962-9470401QXA - Texas Instruments
Specs
Memory Category FIFO
Package Type CPGA
View Details
3 suppliers