Integrated Silicon Solution, Inc. Memory IS42S16100E-7BI

Description
IC DRAM 16MBIT PARALLEL 60TFBGA
Datasheet
Description
IC DRAM 16MBIT PARALLEL 60TFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 16MBIT PARALLEL 60TFBGA

IC DRAM 16MBIT PARALLEL 60TFBGA

Supplier's Site Datasheet
Memory - IS42S16100E-7BI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 16Mbit Parallel 143 MHz 5.5 ns 60-TFBGA (6.4x10.1)

SDRAM Memory IC 16Mbit Parallel 143 MHz 5.5 ns 60-TFBGA (6.4x10.1)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IS42S16100E-7BI IS42S16100E-7BI
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 5.5 ns 5.5 ns
Density 16000 kbits 16000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882682P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type TSOP
Pins 48
View Details
Memory - 7164L20YG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 64 kbits
View Details
 - NMC2147HF-3-MIL - Rochester Electronics
Texas Instruments
Specs
Memory Category SRAM Chip
Package Type FL18
View Details
3 suppliers
Memory - AS58C1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details