Integrated Silicon Solution, Inc. Memory IS42S16100E-6BLI-TR

Description
SDRAM Memory IC 16Mb (1M x 16) Parallel 166MHz 5.5ns 60-TFBGA (6.4x10.1)
Request a Quote Datasheet
Description
SDRAM Memory IC 16Mb (1M x 16) Parallel 166MHz 5.5ns 60-TFBGA (6.4x10.1)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42S16100E-6BLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 16Mb (1M x 16) Parallel 166MHz 5.5ns 60-TFBGA (6.4x10.1)

SDRAM Memory IC 16Mb (1M x 16) Parallel 166MHz 5.5ns 60-TFBGA (6.4x10.1)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42S16100E-6BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42S16100E-6BLI-TR
Integrated Circuits (ICs) - Memory IS42S16100E-6BLI-TR
IC DRAM 16MBIT PARALLEL 60TFBGA

IC DRAM 16MBIT PARALLEL 60TFBGA

Supplier's Site
Memory - IS42S16100E-6BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 16Mbit Parallel 166 MHz 5.5 ns 60-TFBGA (6.4x10.1)

SDRAM Memory IC 16Mbit Parallel 166 MHz 5.5 ns 60-TFBGA (6.4x10.1)

Buy Now Datasheet
IC DRAM 16MBIT PARALLEL 60TFBGA

IC DRAM 16MBIT PARALLEL 60TFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42S16100E-6BLI-TR-ND IS42S16100E-6BLI-TR IS42S16100E-6BLI-TR IS42S16100E-6BLI-TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 16000 kbits 16000 kbits 16000 kbits 16000 kbits
Package Type 60-TFBGA BGA BGA; 60-TFBGA
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