Integrated Silicon Solution, Inc. Memory IS42RM32800E-6BLI-TR

Description
SDRAM - Mobile Memory IC 256Mb (8M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)
Request a Quote Datasheet
Description
SDRAM - Mobile Memory IC 256Mb (8M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42RM32800E-6BLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile Memory IC 256Mb (8M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)

SDRAM - Mobile Memory IC 256Mb (8M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)

Buy Now Datasheet
IC DRAM 256MBIT PARALLEL 90TFBGA

IC DRAM 256MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS42RM32800E-6BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42RM32800E-6BLI-TR
Integrated Circuits (ICs) - Memory IS42RM32800E-6BLI-TR
IC DRAM 256MBIT PARALLEL 90TFBGA

IC DRAM 256MBIT PARALLEL 90TFBGA

Supplier's Site
Memory - IS42RM32800E-6BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 256Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

SDRAM - Mobile Memory IC 256Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42RM32800E-6BLI-TR-ND IS42RM32800E-6BLI-TR IS42RM32800E-6BLI-TR IS42RM32800E-6BLI-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits
Package Type 90-TFBGA BGA BGA; 90-TFBGA
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