SDRAM - Mobile Memory IC 512Mb (16M x 32) Parallel 133MHz 6ns 90-TFBGA (8x13)
512M, 2.5V, Mobile SDRAM, 16Mx32, 133Mhz, 90 ball BGA (8Mm x 13mm) RoHS, IT
SDRAM - Mobile Memory IC 512Mbit Parallel 133 MHz 6 ns 90-TFBGA (8x13)
IC DRAM 512MBIT PARALLEL 90TFBGA
IC DRAM 512MBIT PARALLEL 90TFBGA
| DigiKey | Newark, An Avnet Company | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42RM32160E-75BLI-ND | 29X5153 | IS42RM32160E-75BLI | IS42RM32160E-75BLI | IS42RM32160E-75BLI |
| Product Name | Memory | 512M, 2.5V, Mobile Sdram, 16Mx32, 133Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs, It Integrated Silicon Solution (Issi) | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | |
| Package Type | 90-TFBGA | BGA; 90-TFBGA | BGA |
