The IS42RM32160C-75BL-TR is a 512Mb Mobile Synchronous DRAM from Quarktwin Technology Ltd., configured as a quad 4M x 32 DRAM. It operates at a power supply of 2.5V and features a clock frequency of 133 MHz with a CAS latency of 3, achieving an access time of 5.4 ns. The device supports programmable CAS latency options of 2 and 3, as well as programmable burst lengths of 1, 2, 4, 8, and full page, allowing for flexible data transfer configurations. This memory chip includes advanced features such as auto refresh, temperature compensated self-refresh (TCSR), and partial array self-refresh (PASR) modes, which enhance power efficiency. It is packaged in a 90-ball BGA format (8x13 mm) and is suitable for both commercial (0¬8C to +70¬8C) and industrial (-40¬8C to +85¬8C) temperature ranges. The IS42RM32160C-75BL-TR is designed for applications requiring high-speed data transfer and efficient power management, making it a viable option for engineers looking for reliable mobile memory solutions.
SDRAM - Mobile Memory IC 512Mb (16M x 32) Parallel 133MHz 5.4ns 90-WBGA (8x13)
IC DRAM 512MBIT PARALLEL 90WBGA
IC DRAM 512MBIT PARALLEL 90WBGA
SDRAM - Mobile Memory IC 512Mbit Parallel 133 MHz 5.4 ns 90-WBGA (8x13)
| DigiKey | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42RM32160C-75BL-TR-ND | IS42RM32160C-75BL-TR | IS42RM32160C-75BL-TR | IS42RM32160C-75BL-TR |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | |
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits |
| Package Type | 90-LFBGA | BGA | BGA; 90-LFBGA |
