Integrated Silicon Solution, Inc. Memory IS42RM16800G-6BLI-TR

Description
SDRAM - Mobile Memory IC 128Mb (8M x 16) Parallel 166MHz 5.5ns 54-TFBGA (8x8)
Request a Quote Datasheet
Description
SDRAM - Mobile Memory IC 128Mb (8M x 16) Parallel 166MHz 5.5ns 54-TFBGA (8x8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42RM16800G-6BLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile Memory IC 128Mb (8M x 16) Parallel 166MHz 5.5ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 128Mb (8M x 16) Parallel 166MHz 5.5ns 54-TFBGA (8x8)

Buy Now Datasheet
IC DRAM 128MBIT PARALLEL 54TFBGA

IC DRAM 128MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS42RM16800G-6BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42RM16800G-6BLI-TR
Integrated Circuits (ICs) - Memory IS42RM16800G-6BLI-TR
IC DRAM 128MBIT PARALLEL 54TFBGA

IC DRAM 128MBIT PARALLEL 54TFBGA

Supplier's Site
Memory - IS42RM16800G-6BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 128Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 128Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42RM16800G-6BLI-TR-ND IS42RM16800G-6BLI-TR IS42RM16800G-6BLI-TR IS42RM16800G-6BLI-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type 54-TFBGA BGA BGA; 54-TFBGA
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