Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory IS42RM16200D-6BLI

Description
IC DRAM 32MBIT PARALLEL 54TFBGA
Datasheet
Description
IC DRAM 32MBIT PARALLEL 54TFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - IS42RM16200D-6BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42RM16200D-6BLI
Integrated Circuits (ICs) - Memory IS42RM16200D-6BLI
IC DRAM 32MBIT PARALLEL 54TFBGA

IC DRAM 32MBIT PARALLEL 54TFBGA

Supplier's Site
IC DRAM 32MBIT PARALLEL 54TFBGA

IC DRAM 32MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Memory - IS42RM16200D-6BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 32Mbit Parallel 166 MHz 6 ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 32Mbit Parallel 166 MHz 6 ns 54-TFBGA (8x8)

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS42RM16200D-6BLI IS42RM16200D-6BLI IS42RM16200D-6BLI
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 166 MHz
Access Time 6 ns 6 ns 6 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Integrated Circuits (ICs) - Memory - Controllers - DP8431VX-33 - Acme Chip Technology Co., Limited
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 68-LCC (J-Lead)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers
Memory - 589286-002-00 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Logic - FIFOs Memory - 67C4013-15N - Lingto Electronic Limited
Specs
Data Rate 15 MHz
Operating Current 45 mA
View Details
SDRAM - 2420776 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details