IC DRAM 256MBIT PAR 54TFBGA Product overview: IS42RM16160K-6BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42RM16160K-6BL
Win Source Part Number: 945456-IS42RM16160K-
Series: *
Categories: Memory
SDRAM - Mobile Memory IC 256Mb (16M x 16) Parallel 166MHz 5.5ns 54-TFBGA (8x8)
IC DRAM 256MBIT PARALLEL 54TFBGA
SDRAM - Mobile Memory IC 256Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)
256M, 2.5V, Mobile SDRAM, 16Mx16, 166Mhz, 54 ball BGA (8Mm x 8mm) RoHS, IT
DRAM 256M, 2.5V, 166Mhz 16Mx16 Mobile SDR
IC DRAM 256MBIT PARALLEL 54TFBGA
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Lingto Electronic Limited | Quarktwin Technology Ltd. | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS42RM16160K-6BLI | 945456-IS42RM16160K-6BLI | IS42RM16160K-6BLI-ND | IS42RM16160K-6BLI | IS42RM16160K-6BLI | 29X5147 | 413-IS42RM16160K-6BLI | IS42RM16160K-6BLI |
| Product Name | Memory IC and Storage Component | Memory - SD - IS42RM16160K-6BLI | Memory | Memory | Memory | 256M, 2.5V, Mobile Sdram, 16Mx16, 166Mhz, 54 Ball Bga (8Mm X 8Mm) Rohs, It Integrated Silicon Solution (Issi) | DRAM 256M, 2.5V, 166Mhz 16Mx16 Mobile SDR | Integrated Circuits (ICs) - Memory |
| Memory Category | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | |
| Access Time | 8 ns | 5.5 ns | 5.5 ns | 5.5 ns | 5.5 ns | |||
| Operating Temperature | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |||
| Density | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | 2048000 kbits | 256000 kbits | ||
| Number of Words | 4000 k |
