Integrated Silicon Solution, Inc. Memory IS41LV16100C-50KLI

Description
DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 25ns 42-SOJ
Request a Quote Datasheet
Description
DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 25ns 42-SOJ
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS41LV16100C-50KLI-ND - DigiKey
Thief River Falls, MN, United States
DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 25ns 42-SOJ

DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 25ns 42-SOJ

Buy Now Datasheet
IC DRAM 16MBIT PARALLEL 42SOJ

IC DRAM 16MBIT PARALLEL 42SOJ

Supplier's Site Datasheet
Memory IC and Storage Component - 774-IS41LV16100C-50KLI - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-IS41LV16100C-50KLI
Memory IC and Storage Component 774-IS41LV16100C-50KLI
IC DRAM 16MBIT PARALLEL 42SOJ Product overview: IS41LV16100C-50KLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS41LV16100C-50K LI can be used for catalog matching and distributor lookup.

IC DRAM 16MBIT PARALLEL 42SOJ Product overview: IS41LV16100C-50KLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS41LV16100C-50KLI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - SDRAM - IS41LV16100C-50KLI - 62244-IS41LV16100C-50KLI - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - IS41LV16100C-50KLI
62244-IS41LV16100C-50KLI
Memory - SDRAM - IS41LV16100C-50KLI 62244-IS41LV16100C-50KLI
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 62244-IS41LV16100C-5 0KLI Packaging: Reel - TR Mounting: SMD (SMT) Technology: DRAM - EDO Memory Type: Volatile Memory Size: 16Mb (1M x 16) Access Time: 25ns Family Name: IS41LV16100C Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 42-SOJ Supply Voltage - Operating: 3 V to 3.6 V Memory Format: DRAM Alternative Parts (Cross-Reference): MS418160-60DZR; MT4LC1M16E5DJ-7; MT4LC1M16E5DJ-7S; Introduction Date: April 19, 2010 ECCN: EAR99 Estimated EOL Date: 2019 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 62244-IS41LV16100C-50KLI
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: DRAM - EDO
Memory Type: Volatile
Memory Size: 16Mb (1M x 16)
Access Time: 25ns
Family Name: IS41LV16100C
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 42-SOJ
Supply Voltage - Operating: 3 V to 3.6 V
Memory Format: DRAM
Alternative Parts (Cross-Reference): MS418160-60DZR; MT4LC1M16E5DJ-7; MT4LC1M16E5DJ-7S;
Introduction Date: April 19, 2010
ECCN: EAR99
Estimated EOL Date: 2019
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS41LV16100C-50KLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS41LV16100C-50KLI
Integrated Circuits (ICs) - Memory - Memory IS41LV16100C-50KLI
IC DRAM 16MBIT PARALLEL 42SOJ

IC DRAM 16MBIT PARALLEL 42SOJ

Supplier's Site
IC DRAM 16MBIT PARALLEL 42SOJ

IC DRAM 16MBIT PARALLEL 42SOJ

Supplier's Site Datasheet
Memory - IS41LV16100C-50KLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
DRAM - EDO Memory IC 16Mbit Parallel 25 ns 42-SOJ

DRAM - EDO Memory IC 16Mbit Parallel 25 ns 42-SOJ

Buy Now Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS41LV16100C-50KLI-ND IS41LV16100C-50KLI 774-IS41LV16100C-50KLI 62244-IS41LV16100C-50KLI IS41LV16100C-50KLI IS41LV16100C-50KLI IS41LV16100C-50KLI
Product Name Memory Memory Memory IC and Storage Component Memory - SDRAM - IS41LV16100C-50KLI Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category DRAM Chip DRAM - EDO; DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 16000 kbits 16000 kbits 16000 kbits 16000 kbits 16000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MT4C4001J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 16-1004144-01 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1882864P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 1024000 kbits
Package Type WSON
View Details
Memory - 5962-8961413QXA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 70 ns
Density 1000 kbits
View Details