Integrated Silicon Solution, Inc. Memory IS41LV16100B-60TLI

Description
DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 30ns 44-TSOP II
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Description
DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 30ns 44-TSOP II
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS41LV16100B-60TLI-ND - DigiKey
Thief River Falls, MN, United States
DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 30ns 44-TSOP II

DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 30ns 44-TSOP II

Buy Now Datasheet
IC DRAM 16MBIT PAR 44TSOP II

IC DRAM 16MBIT PAR 44TSOP II

Supplier's Site Datasheet
Memory - IS41LV16100B-60TLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
DRAM - EDO Memory IC 16Mbit Parallel 30 ns 44-TSOP II

DRAM - EDO Memory IC 16Mbit Parallel 30 ns 44-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS41LV16100B-60TLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS41LV16100B-60TLI
Integrated Circuits (ICs) - Memory IS41LV16100B-60TLI
IC DRAM 16MBIT PAR 44TSOP II

IC DRAM 16MBIT PAR 44TSOP II

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS41LV16100B-60TLI-ND IS41LV16100B-60TLI IS41LV16100B-60TLI IS41LV16100B-60TLI
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 16000 kbits 16000 kbits 16000 kbits 16000 kbits
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