Integrated Silicon Solution, Inc. Memory IS41LV16100B-60KLI

Description
DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 30ns 42-SOJ
Request a Quote Datasheet
Description
DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 30ns 42-SOJ
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS41LV16100B-60KLI-ND - DigiKey
Thief River Falls, MN, United States
DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 30ns 42-SOJ

DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 30ns 42-SOJ

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS41LV16100B-60KLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS41LV16100B-60KLI
Integrated Circuits (ICs) - Memory IS41LV16100B-60KLI
IC DRAM 16MBIT PARALLEL 42SOJ

IC DRAM 16MBIT PARALLEL 42SOJ

Supplier's Site
IC DRAM 16MBIT PARALLEL 42SOJ

IC DRAM 16MBIT PARALLEL 42SOJ

Supplier's Site Datasheet
Memory - IS41LV16100B-60KLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
DRAM - EDO Memory IC 16Mbit Parallel 30 ns 42-SOJ

DRAM - EDO Memory IC 16Mbit Parallel 30 ns 42-SOJ

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS41LV16100B-60KLI-ND IS41LV16100B-60KLI IS41LV16100B-60KLI IS41LV16100B-60KLI
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 16000 kbits 16000 kbits 16000 kbits 16000 kbits
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