Integrated Silicon Solution, Inc. Memory IS41C16100C-50TI

Description
DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 25ns 50-TSOP II
Request a Quote Datasheet
Description
DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 25ns 50-TSOP II
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS41C16100C-50TI-ND - DigiKey
Thief River Falls, MN, United States
DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 25ns 50-TSOP II

DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 25ns 50-TSOP II

Buy Now Datasheet
IC DRAM 16MBIT PAR 50TSOP II

IC DRAM 16MBIT PAR 50TSOP II

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS41C16100C-50TI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS41C16100C-50TI
Integrated Circuits (ICs) - Memory IS41C16100C-50TI
IC DRAM 16MBIT PAR 50TSOP II

IC DRAM 16MBIT PAR 50TSOP II

Supplier's Site
Memory - IS41C16100C-50TI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
DRAM - EDO Memory IC 16Mbit Parallel 25 ns 50-TSOP II

DRAM - EDO Memory IC 16Mbit Parallel 25 ns 50-TSOP II

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS41C16100C-50TI-ND IS41C16100C-50TI IS41C16100C-50TI IS41C16100C-50TI
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 16000 kbits 16000 kbits 16000 kbits 16000 kbits
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