Integrated Silicon Solution, Inc. Memory IS41C16100C-50TI-TR

Description
DRAM - EDO Memory IC 16Mbit Parallel 25 ns 50-TSOP II
Datasheet
Description
DRAM - EDO Memory IC 16Mbit Parallel 25 ns 50-TSOP II
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS41C16100C-50TI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
DRAM - EDO Memory IC 16Mbit Parallel 25 ns 50-TSOP II

DRAM - EDO Memory IC 16Mbit Parallel 25 ns 50-TSOP II

Buy Now Datasheet
IC DRAM 16MBIT PAR 50TSOP II

IC DRAM 16MBIT PAR 50TSOP II

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IS41C16100C-50TI-TR IS41C16100C-50TI-TR
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 25 ns 25 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 24C04AE/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 4 kbits
View Details
Memory - AS8F128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 60 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 16-4099-01-T - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory IC and Storage Component - 736-DP8409AD - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type Bulk
View Details
2 suppliers