Integrated Silicon Solution, Inc. Memory IS34MW01G084-BLI-TR

Description
IC FLASH 1GBIT PAR 63FBGA
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Description
IC FLASH 1GBIT PAR 63FBGA
Request a Quote
Datasheet
Datasheet Summary
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The IS34MW01G084-BLI-TR is a 1Gb SLC NAND Flash memory device from Quarktwin Technology Ltd., designed for applications requiring reliable and efficient data storage. It operates at a single supply voltage of 1.8V, with a range from 1.7V to 1.95V, and features a flexible memory architecture with an organization of 128Mb x8 or 64Mb x16. The device supports 4-bit ECC for enhanced data integrity and has an endurance of 100,000 program/erase cycles, with a data retention period of up to 10 years. Performance specifications include a maximum random read time of 25 microseconds and a serial access time of 45 nanoseconds. Typical program times are around 300 microseconds, while block erase operations take approximately 3 milliseconds. The device is available in a 63-ball VFBGA package and is suitable for industrial and automotive applications, with temperature grades ranging from -40¬8C to +105¬8C. Its advanced features include automatic read at power-up, cache program/read operations, and bad-block protection, making it a versatile choice for solid-state storage solutions.

Datasheet Summary
Powered by GS/AI

The IS34MW01G084-BLI-TR is a 1Gb SLC NAND Flash memory device from Quarktwin Technology Ltd., designed for applications requiring reliable and efficient data storage. It operates at a single supply voltage of 1.8V, with a range from 1.7V to 1.95V, and features a flexible memory architecture with an organization of 128Mb x8 or 64Mb x16. The device supports 4-bit ECC for enhanced data integrity and has an endurance of 100,000 program/erase cycles, with a data retention period of up to 10 years. Performance specifications include a maximum random read time of 25 microseconds and a serial access time of 45 nanoseconds. Typical program times are around 300 microseconds, while block erase operations take approximately 3 milliseconds. The device is available in a 63-ball VFBGA package and is suitable for industrial and automotive applications, with temperature grades ranging from -40¬8C to +105¬8C. Its advanced features include automatic read at power-up, cache program/read operations, and bad-block protection, making it a versatile choice for solid-state storage solutions.

Suppliers

Company
Product
Description
Supplier Links
Memory - 706-IS34MW01G084-BLI-TR-ND - DigiKey
Thief River Falls, MN, United States
IC FLASH 1GBIT PAR 63FBGA

IC FLASH 1GBIT PAR 63FBGA

Buy Now Datasheet
Memory - IS34MW01G084-BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND (SLC) Memory IC 1Gbit Parallel 30 ns 63-VFBGA (9x11)

FLASH - NAND (SLC) Memory IC 1Gbit Parallel 30 ns 63-VFBGA (9x11)

Buy Now Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
IS34MW01G084-BLI-TR
Integrated Circuits (ICs) - Memory - Memory IS34MW01G084-BLI-TR
1 Gbit (x8, 4 bit ECC), 63 Ball

1 Gbit (x8, 4 bit ECC), 63 Ball

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 706-IS34MW01G084-BLI-TR-ND IS34MW01G084-BLI-TR IS34MW01G084-BLI-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash Flash; FLASH Flash; Non-Volatile
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type 63-VFBGA BGA; 63-VFBGA
Supply Voltage 1.7V ~ 1.95V 1.7V ~ 1.95V Surface Mount
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