1 Gbit(x8, 1 bit ECC), 63 Ball V Product overview: IS34ML01G081-BLI-TR from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1 bit. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1 bit, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS34ML01G081-BLI
IC FLASH 1GBIT PAR 63FBGA
Win Source Part Number: 1356848-IS34ML01G081
Category: Integrated Circuits (ICs) - Memory - Memory
Package: Tape & Reel
Temperature Range - Operating: -40°C ~ 85°C (TA)
Fake Threat In the Open Market: 42 pct.
MSL Level: 3 (168 Hours)
Mfr: ISSI, Integrated Silicon Solution Inc
Series: Automotive, AEC-Q100
Product Status: Active
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)
Technology: FLASH - NAND (SLC)
Mounting Type: Surface Mount
REACH Status: REACH Unaffected
Voltage - Supply: 2.7V ~ 3.6V
Memory Type: Non-Volatile
Memory Format: FLASH
Memory Size: 1Gbit
Memory Organization: 128M x 8
Memory Interface: Parallel
Write Cycle Time - Word, Page: 25ns
Access Time: 20 ns
1 Gbit(x8, 1 bit ECC), 63 Ball V
FLASH - NAND (SLC) Memory IC 1Gbit Parallel 20 ns 63-VFBGA (9x11)
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Acme Chip Technology Co., Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS34ML01G081-BLI-TR | 706-IS34ML01G081-BLI-TR-ND | 1356848-IS34ML01G081-BLI-TR | IS34ML01G081-BLI-TR | IS34ML01G081-BLI-TR |
| Product Name | 1 bit Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory - Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Flash; Non-Volatile | Flash | Flash; Non-Volatile | Flash; Non-Volatile | Flash; FLASH |
| Access Time | 20 ns | 20 ns | 20 ns | ||
| Cycle Time | 25 ns | 25 ns | 25 ns | ||
| Endurance | 100000 Write/Erase Cycles | ||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
