Integrated Silicon Solution, Inc. Memory IS26KS512S-DPBLI00

Description
FLASH - NOR Memory IC 512Mbit Parallel 166 MHz 96 ns 24-VFBGA (6x8)
  • Memory - IS26KS512S-DPBLI00 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - IS26KS512S-DPBLI00 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
FLASH - NOR Memory IC 512Mbit Parallel 166 MHz 96 ns 24-VFBGA (6x8)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS26KS512S-DPBLI00 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
IS26KS512S-DPBLI00
Memory IS26KS512S-DPBLI00
FLASH - NOR Memory IC 512Mbit Parallel 166 MHz 96 ns 24-VFBGA (6x8)

FLASH - NOR Memory IC 512Mbit Parallel 166 MHz 96 ns 24-VFBGA (6x8)

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Memory - IS26KS512S-DPBLI00 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
IS26KS512S-DPBLI00
Memory IS26KS512S-DPBLI00
IC FLASH 512MBIT PAR 24VFBGA

IC FLASH 512MBIT PAR 24VFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IS26KS512S-DPBLI00 IS26KS512S-DPBLI00
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Access Time 96 ns 96 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
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