Integrated Silicon Solution, Inc. Memory IS25LQ080B-JBLE-TR

Description
FLASH - NOR Memory IC 8Mb (1M x 8) SPI - Quad I/O 104MHz 8-SOIC
Request a Quote Datasheet
Description
FLASH - NOR Memory IC 8Mb (1M x 8) SPI - Quad I/O 104MHz 8-SOIC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS25LQ080B-JBLE-TR-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 8Mb (1M x 8) SPI - Quad I/O 104MHz 8-SOIC

FLASH - NOR Memory IC 8Mb (1M x 8) SPI - Quad I/O 104MHz 8-SOIC

Buy Now Datasheet
Memory - IS25LQ080B-JBLE-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 8Mbit SPI - Quad I/O 104 MHz 8-SOIC

FLASH - NOR Memory IC 8Mbit SPI - Quad I/O 104 MHz 8-SOIC

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS25LQ080B-JBLE-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS25LQ080B-JBLE-TR
Integrated Circuits (ICs) - Memory IS25LQ080B-JBLE-TR
IC FLASH 8MBIT SPI/QUAD 8SOIC

IC FLASH 8MBIT SPI/QUAD 8SOIC

Supplier's Site
IC FLASH 8MBIT SPI/QUAD 8SOIC

IC FLASH 8MBIT SPI/QUAD 8SOIC

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS25LQ080B-JBLE-TR-ND IS25LQ080B-JBLE-TR IS25LQ080B-JBLE-TR IS25LQ080B-JBLE-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category Flash Flash; FLASH Flash; Non-Volatile Flash; Flash
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Density 8000 kbits 8000 kbits 8000 kbits 8000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

 - LP3913SQ-AD/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type HVQFN48
View Details
SDRAM - 2420777P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details
Memory - MT42C4256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category NVRAM; VRAM
Access Time 100 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 457780-5790 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers