Integrated Silicon Solution, Inc. Memory IS25LQ010B-JBLE-TR

Description
FLASH - NOR Memory IC 1Mb (128K x 8) SPI - Quad I/O 104MHz 8-SOIC
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Description
FLASH - NOR Memory IC 1Mb (128K x 8) SPI - Quad I/O 104MHz 8-SOIC
Request a Quote
Datasheet
Datasheet Summary
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The IS25LQ010B-JBLE-TR is a 1Mbit (128Kbyte) serial flash memory device from Quarktwin Technology Ltd., featuring a 3V quad SPI interface. It supports standard SPI, dual, and quad I/O modes, allowing for high-speed data transfer rates of up to 104 MHz, which translates to an equivalent throughput of 52MB/s. The memory is organized into 256-byte programmable pages and supports various erase options, including 4Kbyte sectors and chip erase. This memory device is designed for low power consumption, operating with a supply voltage range of 2.3V to 3.6V, with active read current at 10 mA and standby current at 8 ¬µA. It also features a wide temperature range, with options for extended temperatures from -40¬8C to +105¬8C and automotive grade from -40¬8C to +125¬8C. The IS25LQ010B-JBLE-TR includes advanced security features such as software and hardware write protection, a unique 128-bit ID, and a dedicated security area. The device is available in multiple package options, including an 8-pin SOIC (208mil) and is compliant with industry standards, making it suitable for applications requiring reliable non-volatile memory solutions.

Datasheet Summary
Powered by GS/AI

The IS25LQ010B-JBLE-TR is a 1Mbit (128Kbyte) serial flash memory device from Quarktwin Technology Ltd., featuring a 3V quad SPI interface. It supports standard SPI, dual, and quad I/O modes, allowing for high-speed data transfer rates of up to 104 MHz, which translates to an equivalent throughput of 52MB/s. The memory is organized into 256-byte programmable pages and supports various erase options, including 4Kbyte sectors and chip erase. This memory device is designed for low power consumption, operating with a supply voltage range of 2.3V to 3.6V, with active read current at 10 mA and standby current at 8 ¬µA. It also features a wide temperature range, with options for extended temperatures from -40¬8C to +105¬8C and automotive grade from -40¬8C to +125¬8C. The IS25LQ010B-JBLE-TR includes advanced security features such as software and hardware write protection, a unique 128-bit ID, and a dedicated security area. The device is available in multiple package options, including an 8-pin SOIC (208mil) and is compliant with industry standards, making it suitable for applications requiring reliable non-volatile memory solutions.

Suppliers

Company
Product
Description
Supplier Links
Memory - IS25LQ010B-JBLE-TR-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 1Mb (128K x 8) SPI - Quad I/O 104MHz 8-SOIC

FLASH - NOR Memory IC 1Mb (128K x 8) SPI - Quad I/O 104MHz 8-SOIC

Buy Now Datasheet
Memory - IS25LQ010B-JBLE-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 1Mbit SPI - Quad I/O 104 MHz 8-SOIC

FLASH - NOR Memory IC 1Mbit SPI - Quad I/O 104 MHz 8-SOIC

Buy Now Datasheet
IC FLASH 1MBIT SPI/QUAD 8SOIC

IC FLASH 1MBIT SPI/QUAD 8SOIC

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS25LQ010B-JBLE-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS25LQ010B-JBLE-TR
Integrated Circuits (ICs) - Memory IS25LQ010B-JBLE-TR
IC FLASH 1MBIT SPI/QUAD 8SOIC

IC FLASH 1MBIT SPI/QUAD 8SOIC

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS25LQ010B-JBLE-TR-ND IS25LQ010B-JBLE-TR IS25LQ010B-JBLE-TR IS25LQ010B-JBLE-TR
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category Flash Flash; FLASH Flash; Flash Flash; Non-Volatile
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits
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