Integrated Silicon Solution, Inc. Memory IS25LQ010B-JBLE-TR

Description
FLASH - NOR Memory IC 1Mb (128K x 8) SPI - Quad I/O 104MHz 8-SOIC
Request a Quote
Description
FLASH - NOR Memory IC 1Mb (128K x 8) SPI - Quad I/O 104MHz 8-SOIC
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IS25LQ010B-JBLE-TR is a 1Mbit (128Kbyte) serial flash memory device from Quarktwin Technology Ltd., featuring a 3V quad SPI interface. It supports standard SPI, dual, and quad I/O modes, allowing for high-speed data transfer rates of up to 104 MHz, which translates to an equivalent throughput of 52MB/s. The memory is organized into 256-byte programmable pages and supports various erase options, including 4Kbyte sectors and chip erase. This memory device is designed for low power consumption, operating with a supply voltage range of 2.3V to 3.6V, with active read current at 10 mA and standby current at 8 ¬µA. It also features a wide temperature range, with options for extended temperatures from -40¬8C to +105¬8C and automotive grade from -40¬8C to +125¬8C. The IS25LQ010B-JBLE-TR includes advanced security features such as software and hardware write protection, a unique 128-bit ID, and a dedicated security area. The device is available in multiple package options, including an 8-pin SOIC (208mil) and is compliant with industry standards, making it suitable for applications requiring reliable non-volatile memory solutions.

Datasheet Summary
Powered by GS/AI

The IS25LQ010B-JBLE-TR is a 1Mbit (128Kbyte) serial flash memory device from Quarktwin Technology Ltd., featuring a 3V quad SPI interface. It supports standard SPI, dual, and quad I/O modes, allowing for high-speed data transfer rates of up to 104 MHz, which translates to an equivalent throughput of 52MB/s. The memory is organized into 256-byte programmable pages and supports various erase options, including 4Kbyte sectors and chip erase. This memory device is designed for low power consumption, operating with a supply voltage range of 2.3V to 3.6V, with active read current at 10 mA and standby current at 8 ¬µA. It also features a wide temperature range, with options for extended temperatures from -40¬8C to +105¬8C and automotive grade from -40¬8C to +125¬8C. The IS25LQ010B-JBLE-TR includes advanced security features such as software and hardware write protection, a unique 128-bit ID, and a dedicated security area. The device is available in multiple package options, including an 8-pin SOIC (208mil) and is compliant with industry standards, making it suitable for applications requiring reliable non-volatile memory solutions.

Suppliers

Company
Product
Description
Supplier Links
Memory - IS25LQ010B-JBLE-TR-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 1Mb (128K x 8) SPI - Quad I/O 104MHz 8-SOIC

FLASH - NOR Memory IC 1Mb (128K x 8) SPI - Quad I/O 104MHz 8-SOIC

Buy Now Datasheet
Memory - IS25LQ010B-JBLE-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 1Mbit SPI - Quad I/O 104 MHz 8-SOIC

FLASH - NOR Memory IC 1Mbit SPI - Quad I/O 104 MHz 8-SOIC

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS25LQ010B-JBLE-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS25LQ010B-JBLE-TR
Integrated Circuits (ICs) - Memory IS25LQ010B-JBLE-TR
IC FLASH 1MBIT SPI/QUAD 8SOIC

IC FLASH 1MBIT SPI/QUAD 8SOIC

Supplier's Site
IC FLASH 1MBIT SPI/QUAD 8SOIC

IC FLASH 1MBIT SPI/QUAD 8SOIC

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS25LQ010B-JBLE-TR-ND IS25LQ010B-JBLE-TR IS25LQ010B-JBLE-TR IS25LQ010B-JBLE-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category Flash Flash; FLASH Flash; Non-Volatile Flash; Flash
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Density 1000 kbits 1000 kbits 1000 kbits 1000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ27C512 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EPROM; UVEPROM
Access Time 15 to 25 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 16-4099-01 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1882635 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - Memory - Controllers - BQ2205LYPWR - 1154093-BQ2205LYPWR - Win Source Electronics
Specs
Operating Temperature -20 to 70 C (-4 to 158 F)
Package Type SSOP
Supply Voltage 3 V ~ 3.6 V
View Details
4 suppliers