FLASH - NOR Memory IC 512Mb (64M x 8) SPI - Quad I/O, QPI, DTR 133MHz 8-WSON (8x6)
FLASH - NOR Memory IC 512Mb (64M x 8) SPI - Quad I/O, QPI, DTR 133MHz 8-WSON (8x6)
FLASH - NOR Memory IC 512Mb (64M x 8) SPI - Quad I/O, QPI, DTR 133MHz 8-WSON (8x6)
Win Source Part Number: 1117720-IS25LP512M-J
Category: Integrated Circuits (ICs)>Memory
Package: Tape & Reel
Standard Package: 4,000
Mounting: SMD (SMT)
Technology: FLASH - NOR
Memory Type: Non-Volatile
Memory Size: 512Mb (64M x 8)
Voltage - Supply: 2.3V ~ 3.6V
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (8x6)
Temperature Range - Operating: -40°C ~ 105°C (TA)
Memory Format: FLASH
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 1.6ms
Memory Interface: SPI - Quad I/O, QPI, DTR
Alternative Parts (Cross-Reference): IS25LP512M-JLLE-TR.;
ECCN: 3A991B1A
Fake Threat In the Open Market: 50 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071
Mfr: ISSI, Integrated Silicon Solution Inc
Other Names: 706-IS25LP512M-JLLE-
Base Product Number: IS25LP512
IC FLASH 512MBIT SPI/QUAD 8WSON Product overview: IS25LP512M-JLLE-TR from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Quad. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Quad, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS25LP512M-JLLE-
IC FLASH 512MBIT SPI/QUAD 8WSON
FLASH - NOR Memory IC 512Mbit SPI - Quad I/O, QPI, DTR 133 MHz 8-WSON (8x6)
IC FLASH 512MBIT SPI/QUAD 8WSON
IC FLASH 512MBIT SPI/QUAD 8WSON
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 706-IS25LP512M-JLLE-TRCT-ND | 1117720-IS25LP512M-JLLE-TR | 774-IS25LP512M-JLLE-TR | IS25LP512M-JLLE-TR | IS25LP512M-JLLE-TR | IS25LP512M-JLLE-TR | IS25LP512M-JLLE-TR |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | Quad Memory IC and Storage Component | Integrated Circuits (ICs) - Memory | Memory | Memory | Memory |
| Memory Category | Flash | Flash; Non-Volatile | Flash | Flash; Non-Volatile | Flash; FLASH | Flash; Flash | Flash; FLASH - NOR |
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 C (-40 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | |
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | |
| Package Type | 8-WDFN Exposed Pad | 8-WDFN Exposed Pad | 8-WDFN Exposed Pad | ||||
| Supply Voltage | 2.3V ~ 3.6V | 2.3V ~ 3.6V | -3.3V; 2.3 | 3.6V; 2.3V ~ 3.6V | 3.6V; 2.3V ~ 3.6V | 2.3V ~ 3.6V |
