Integrated Device Technology 5.0V 2K x 8 Asynchronous Static RAM 8403608LA

Description
The 84036 (6116 SRAM ) is organized as 2K x 8. This part offers a reduced power standby mode.The low-power version also offers a battery backup data retention capability where the circuit typically consumes only 1µW to 4µW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation.
Datasheet
Description
The 84036 (6116 SRAM ) is organized as 2K x 8. This part offers a reduced power standby mode.The low-power version also offers a battery backup data retention capability where the circuit typically consumes only 1µW to 4µW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
5.0V 2K x 8 Asynchronous Static RAM - 8403608LA - Integrated Device Technology
San Jose, CA, USA
5.0V 2K x 8 Asynchronous Static RAM
8403608LA
5.0V 2K x 8 Asynchronous Static RAM 8403608LA
The 84036 (6116 SRAM ) is organized as 2K x 8. This part offers a reduced power standby mode.The low-power version also offers a battery backup data retention capability where the circuit typically consumes only 1µW to 4µW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation.

The 84036 (6116 SRAM ) is organized as 2K x 8. This part offers a reduced power standby mode.The low-power version also offers a battery backup data retention capability where the circuit typically consumes only 1µW to 4µW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation.

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 8403608LA
Product Name 5.0V 2K x 8 Asynchronous Static RAM
Memory Category SRAM Chip
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 16 kbits
Number of Words 2 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - CY14B512PA-SFXI-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; "16-SOIC (0.295"", 7.50mm Width)"
View Details
2 suppliers
SDRAM - 2420770 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
CD40105B CMOS 4-Bit-by-16-Word FIFO Register - CD40105BE - Texas Instruments
Specs
Memory Category FIFO
Package Type PDIP,SO,TSSOP
View Details
5 suppliers
Memory - 7164L20YGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 64 kbits
View Details