Integrated Device Technology 3.3V 512K x 18 Synchronous 3.3V I/O Flowthrough SRAM 71V67903S75PFGI8

Description
The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Description
The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

Suppliers

Company
Product
Description
Supplier Links
3.3V 512K x 18 Synchronous 3.3V I/O Flowthrough SRAM - 71V67903S75PFGI8 - Integrated Device Technology
San Jose, CA, USA
3.3V 512K x 18 Synchronous 3.3V I/O Flowthrough SRAM
71V67903S75PFGI8
3.3V 512K x 18 Synchronous 3.3V I/O Flowthrough SRAM 71V67903S75PFGI8
The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V67903S75PFGI8
Product Name 3.3V 512K x 18 Synchronous 3.3V I/O Flowthrough SRAM
Memory Category SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 512 kbits
Number of Words 512 k
Unlock Full Specs
to access all available technical data

Similar Products

5V Memory IC and Storage Component - 774-MT5C1009CW70L883C - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers
Memory - 315-0657-000 AAA - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
 - 93425DMQB30 - Rochester Electronics
Specs
Memory Category SRAM Chip
Logic Family TTL
Package Type DIP; CDIP16
View Details
4 suppliers
SDRAM - 2420772 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 64000 k
View Details