Integrated Device Technology 3.3V 512K x 18 Synchronous 3.3V I/O Flowthrough SRAM 71V67903S75PFG8

Description
The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Description
The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

Suppliers

Company
Product
Description
Supplier Links
3.3V 512K x 18 Synchronous 3.3V I/O Flowthrough SRAM - 71V67903S75PFG8 - Integrated Device Technology
San Jose, CA, USA
3.3V 512K x 18 Synchronous 3.3V I/O Flowthrough SRAM
71V67903S75PFG8
3.3V 512K x 18 Synchronous 3.3V I/O Flowthrough SRAM 71V67903S75PFG8
The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

The 71V67903 3.3V CMOS SRAM is organized as 512K x 18. The 71V67903 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V67903S75PFG8
Product Name 3.3V 512K x 18 Synchronous 3.3V I/O Flowthrough SRAM
Memory Category SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Density 512 kbits
Number of Words 512 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS29F010 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 60 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 28486511 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
 - 93425DMQB40 - Rochester Electronics
Specs
Memory Category SRAM Chip
Logic Family TTL
Package Type DIP; CDIP16
View Details
3 suppliers
Flash Memory - 1882745P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 32000 kbits
Package Type USON
View Details