Integrated Device Technology 3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM 71V67803S133BG8

Description
The 71V67803 3.3V CMOS SRAM is organized as 512K x 18. The 71V67803 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V67803 3.3V CMOS SRAM is organized as 512K x 18. The 71V67803 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM - 71V67803S133BG8 - Integrated Device Technology
San Jose, CA, USA
3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM
71V67803S133BG8
3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM 71V67803S133BG8
The 71V67803 3.3V CMOS SRAM is organized as 512K x 18. The 71V67803 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

The 71V67803 3.3V CMOS SRAM is organized as 512K x 18. The 71V67803 SRAM contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V67803S133BG8
Product Name 3.3V 512K x 18 Synchronous 3.3V I/O PipeLined SRAM
Memory Category SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Density 512 kbits
Number of Words 512 k
Unlock Full Specs
to access all available technical data

Similar Products

 - 93L422DM - Rochester Electronics
Texas Instruments
Specs
Memory Category SRAM Chip
Package Type DIP; CDIP22
View Details
3 suppliers
Memory - 7164L85TDB - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 85 ns
Density 64 kbits
View Details
Memory - 8 909 002 174 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - MYXX28HC256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 70 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details