Integrated Device Technology 3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM 71V67703S85BGGI8

Description
The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM - 71V67703S85BGGI8 - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM
71V67703S85BGGI8
3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM 71V67703S85BGGI8
The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V67703S85BGGI8
Product Name 3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM
Memory Category SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 512 kbits
Number of Words 256 k
Unlock Full Specs
to access all available technical data

Similar Products

Memories - Radiation hardened and high-reliability memories - Space Memories - 5962R1821501VXF - 5962R1821501VXF - Infineon Technologies AG
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 144000 kbits
Number of Words 2 k
View Details
Memory - 6116SA15SOG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Density 16 kbits
View Details
SDRAM - 1882676P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 4096000 kbits
View Details
CD54HC40105 High Speed CMOS Logic 4-Bit by 16-Word FIFO Register - CD54HC40105F3A - Texas Instruments
Specs
Memory Category FIFO
Package Type CDIP
View Details
3 suppliers