The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 100 MHz 8 ns 100-TQFP (14x14)
IC SRAM 9MBIT PARALLEL 100TQFP
| Integrated Device Technology | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V67703S80PFG | 71V67703S80PFG | 71V67703S80PFG |
| Product Name | 3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | |
| Density | 512 kbits | 9000 kbits | 9000 kbits |
| Number of Words | 256 k | ||
| Address Bus Width | 36 bits |
