The 71V67703 3.3V CMOS SRAM is organized as 256K x 36. The 71V67703 SRAM contains write, data, address and control registers. There are no registers in the data output path (flow-through architecture). The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
256K X 36, 3.3V Synchronous SRAM 3.3V I/O, Burst Counter Flow-Through Output, Single Cycle Deselect
IC SRAM 9MBIT PAR 165CABGA
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 100 MHz 8 ns 165-CABGA (13x15)
| Integrated Device Technology | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V67703S80BQ | 71V67703S80BQ | 71V67703S80BQ | 71V67703S80BQ |
| Product Name | 3.3V 256K x 36 Synchronous 3.3V I/O Flowthrough SRAM | Integrated Circuits (ICs) - Memory - Memory | Memory | |
| Memory Category | SRAM Chip | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Density | 512 kbits | 9000 kbits | 9000 kbits | |
| Number of Words | 256 k | |||
| Address Bus Width | 36 bits |
